PART |
Description |
Maker |
IRKLF102-08HJ IRKLF112-08HN IRKLF102-06HK IRKLF102 |
164.85 A, 800 V, SCR Silicon Controlled Rectifier, 250 A, 800 V, SCR, POWER, INT-A-PAK-5 Silicon Controlled Rectifier, 164.85 A, 600 V, SCR Silicon Controlled Rectifier, 164.85 A, 1200 V, SCR
|
Vishay Semiconductors
|
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
VSKH250-08PBF VSKL250-16 SKT250-04PBF SKT250-08PBF |
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 Silicon Controlled Rectifier, 555 A, 1600 V, SCR, MAGN-A-PAK-5 Silicon Controlled Rectifier, 555 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 555 A, 1000 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 377 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 Silicon Controlled Rectifier, 377 A, 1200 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
|
Vishay Semiconductors Vishay Siliconix
|
2N6504G 2N650406 2N6667G 2N666705 2N6509TG 2N6504 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60?80 V, 65 W
|
ONSEMI[ON Semiconductor]
|
IRKT41-04 IRKT41-10 IRKT41-14 IRKT41-12 IRKT41-06 |
Silicon Controlled Rectifier, 62.8 A, 400 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1000 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA
|
Vishay Semiconductors
|
MCR08BT1 MCR08B MCR08MT1 MCR08BT1-D |
Sensiteve Gate Silicon Controlled Rectifier Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管(高击穿电压低集电极发射极饱和电压) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
2N3651 2N3652 2N3650 2N3653 |
35A silicon controlled rectifier. Vrsom 300V. 35A silicon controlled rectifier. Vrsom 400V. 35A silicon controlled rectifier. Vrsom 150V. 35A silicon controlled rectifier. Vrsom 500V.
|
General Electric Solid State
|
BT152-600 BT152 |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
NX5P2924-15 |
Logic controlled high-side power switch
|
NXP Semiconductors
|
NX3P191UK |
Logic controlled high-side power switch
|
NXP Semiconductors
|
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